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Cited article:

Development of a Very Low-Noise Cryogenic Preamplifier for Large-Area SiPM Devices

Marco D'Incecco, Cristiano Galbiati, Graham K. Giovanetti, et al.
IEEE Transactions on Nuclear Science 65 (4) 1005 (2018)
https://doi.org/10.1109/TNS.2018.2799325

Cryogenic Preamplifiers for Magnetic Resonance Imaging

Daniel H. Johansen, Juan D. Sanchez-Heredia, Jan R. Petersen, et al.
IEEE Transactions on Biomedical Circuits and Systems 12 (1) 202 (2018)
https://doi.org/10.1109/TBCAS.2017.2776256

The influence of Ge grading on the bias and temperature characteristics of SiGe HBTs for precision analog circuits

S.L. Salmon, J.D. Cressler, R.C. Jaeger and D.L. Harame
IEEE Transactions on Electron Devices 47 (2) 292 (2000)
https://doi.org/10.1109/16.822270

Determination of bandgap narrowing and parasitic energy barriers in SiGe HBT's integrated in a bipolar technology

B. Le Tron, M.D.R. Hashim, P. Ashburn, et al.
IEEE Transactions on Electron Devices 44 (5) 715 (1997)
https://doi.org/10.1109/16.568031

Neutral base recombination and its influence on the temperature dependence of Early voltage and current gain-Early voltage product in UHV/CVD SiGe heterojunction bipolar transistors

A.J. Joseph, J.D. Cressler, D.M. Richey, R.C. Jaeger and D.L. Harame
IEEE Transactions on Electron Devices 44 (3) 404 (1997)
https://doi.org/10.1109/16.556150