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Cited article:

Temperature scaling concept of MOSFET

K. Masu, K. Tsubouchi

J. Phys. IV France, 04 C6 (1994) C6-3-C6-12

DOI: https://doi.org/10.1051/jp4:1994601

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This article has been cited by the following article(s):

Temperature-Dependent Electrical Properties of nMOSFETs With Different Thickness Al₂O₃ Capping Layer and TiN Gate

Danghui Wang, Junna Zheng, Yang Zhang, et al.
IEEE Transactions on Electron Devices 68 (12) 6020 (2021)
https://doi.org/10.1109/TED.2021.3118660