Propriétés des couches de ZrO2 et de HfO2 obtenues par évaporation thermique réactive
J. Phys. IV France, 03 C7 (1993) C7-1003-C7-1006
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Physical and electrical characterization of HfO[sub 2] metal–insulator–metal capacitors for Si analog circuit applications
Hang Hu, Chunxiang Zhu, Y. F. Lu, et al.Journal of Applied Physics 94 (1) 551 (2003)
https://doi.org/10.1063/1.1579550