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Cited article:

Stability of an exciton bound to an ionized donor impurity in a GaAs/Ga1−xAlxAs semiconductor quantum well in a magnetic field

I. Essaoudi, B. Stébé, A. Ainane and M. Saber
Physica E: Low-dimensional Systems and Nanostructures 14 (3) 336 (2002)
https://doi.org/10.1016/S1386-9477(01)00170-9

Quantum-confined Stark effects of an exciton bound to an ionized donor in a GaAs/Ga1-xAlxAs quantum well

I. Essaoudi, B. Stébé and A. Ainane
Physical Review B 64 (23) 235311 (2001)
https://doi.org/10.1103/PhysRevB.64.235311

Exciton bound to an ionized donor impurity in semiconductor spherical quantum dots

B. Stébé, E. Assaid, F. Dujardin and S. Le Goff
Physical Review B 54 (24) 17785 (1996)
https://doi.org/10.1103/PhysRevB.54.17785

Existence of an exciton bound to an ionized donor impurity in semiconductor quantum crystallites

E. Assaid, F. Dujardin and B. Stebe
Solid State Communications 90 (10) 651 (1994)
https://doi.org/10.1016/0038-1098(94)90540-1