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Cited article:

Modelling of the composition segregation effect during epitaxial growth of InGaAs quantum well heterostructures

S V Khazanova and M I Vasilevskiy
Semiconductor Science and Technology 25 (8) 085008 (2010)
https://doi.org/10.1088/0268-1242/25/8/085008

Study of the influence of indium segregation on the optical properties of InGaAs/GaAs quantum wells via split-operator method

S. Martini, J. E. Manzoli and A. A. Quivy
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 28 (2) 277 (2010)
https://doi.org/10.1116/1.3301612

Optical study of segregation effects on the electronic properties of molecular-beam-epitaxy grown (In,Ga)As/GaAs quantum wells

P. Disseix, J. Leymarie, A. Vasson, et al.
Physical Review B 55 (4) 2406 (1997)
https://doi.org/10.1103/PhysRevB.55.2406

Effects of segregation on the optical properties of (In,Ga)As/GaAs quantum wells grown by MBE under various conditions

P. Disseix, J. Leymarie, A. Vasson, et al.
Materials Science and Engineering: B 44 (1-3) 151 (1997)
https://doi.org/10.1016/S0921-5107(96)01749-7

Optical investigations in (In,Ga)As/GaAs quantum wells grown by metalorganic molecular-beam epitaxy

J. Leymarie, C. Monier, A. Vasson, et al.
Physical Review B 51 (19) 13274 (1995)
https://doi.org/10.1103/PhysRevB.51.13274