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Cited article:

Torque and temperature dependence of the hysteretic voltage-induced torsional strain in tantalum trisulfide

H. Zhang, J. Nichols and J. Brill
Physical Review B 84 (12) (2011)
https://doi.org/10.1103/PhysRevB.84.125134

End-current injection contacts for anisotropic materials: Fabrication and application to the quasi-one-dimensional conductorNbSe3

A. F. Isakovic, K. Cicak and R. E. Thorne
Physical Review B 77 (11) (2008)
https://doi.org/10.1103/PhysRevB.77.115141

Electron-spin polarization near the Fermi level in n-type modulation-doped semiconductor quantum wells

A. Triques, J. Urdanívia, F. Iikawa, et al.
Physical Review B 59 (12) R7813 (1999)
https://doi.org/10.1103/PhysRevB.59.R7813

Exciton spin thermalization in strained and relaxed Zn1-xMnxSe epilayers

C. Poweleit, A. Hodges, T.-B. Sun, L. Smith and B. Jonker
Physical Review B 59 (11) 7610 (1999)
https://doi.org/10.1103/PhysRevB.59.7610

Spin relaxation of electrons in p-doped GaAs quantum wells under applied voltage

M. Z. Maialle and M. H. Degani
Applied Physics Letters 70 (14) 1864 (1997)
https://doi.org/10.1063/1.118715

Electron-spin relaxation in p-type quantum wells via the electron-hole exchange interaction:The effects of the valence-band spin mixing and of an applied longitudinal electric field

M. Z. Maialle and M. H. Degani
Physical Review B 55 (20) 13771 (1997)
https://doi.org/10.1103/PhysRevB.55.13771