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Cited article:

Surface Reaction Kinetics of Chemical Vapor Infiltration of SiC from CH3SiCl3/H2 Revealed Using Ultradeep Microchannels

Kohei Shima, Yuhei Otaka, Noboru Sato, Yuichi Funato, Hidetoshi Sugiura, Takuya Nakahara, Yasuyuki Fukushima, Takeshi Momose and Yukihiro Shimogaki
ACS Applied Engineering Materials 3 (9) 3065 (2025)
https://doi.org/10.1021/acsaenm.5c00519

Effect of deposition temperature on the corrosion behavior of CVD SiC coatings on SiCf/SiC composites under simulated PWR conditions

Yiming Qin, Xiaoqiang Li, Chuanxin Liu, Ce Zheng, Qingping Mao, Bo Chen, Ke Jing, Yaru Tan, Laifei Cheng and Litong Zhang
Corrosion Science 181 109233 (2021)
https://doi.org/10.1016/j.corsci.2020.109233

New strategies for conformal, superconformal, and ultrasmooth films by low temperature chemical vapor deposition

John R. Abelson and Gregory S. Girolami
Journal of Vacuum Science & Technology A 38 (3) (2020)
https://doi.org/10.1116/6.0000035

Transient stages during the chemical vapour deposition of silicon carbide from CH3SiCl3/H2: impact on the physicochemical and interfacial properties of the coatings

Georges Chollon, Francis Langlais, Maud Placide and Patrick Weisbecker
Thin Solid Films 520 (19) 6075 (2012)
https://doi.org/10.1016/j.tsf.2012.05.066

Multiplicity of steady states in the codeposition of silicon carbide and carbon

Igor M. Kostjuhin and Stratis V. Sotirchos
AIChE Journal 48 (12) 2910 (2002)
https://doi.org/10.1002/aic.690481218

In situ measurements and growth kinetics of silicon carbide chemical vapor deposition from methyltrichlorosilane

H. Sone, T. Kaneko and N. Miyakawa
Journal of Crystal Growth 219 (3) 245 (2000)
https://doi.org/10.1016/S0022-0248(00)00616-3