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Cited article:

Electrical properties of interlevel deposited oxides related to polysilicon preparation

C. COBIANU, O. POPA, D. DASCALU

J. Phys. IV France, 03 C3 (1993) C3-467-C3-473

DOI: https://doi.org/10.1051/jp4:1993365

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This article has been cited by the following article(s):

High quality interpoly dielectrics deposited on the nitrided-polysilicon for nonvolatile memory devices

Wen Luh Yang, Tien Sheng Chao, Chun-Ming Cheng, Tung Ming Pan and Tan Fu Lei
IEEE Transactions on Electron Devices 48 (7) 1304 (2001)
https://doi.org/10.1109/16.930643

Deposited inter-polysilicon dielectrics for nonvolatile memories

J.H. Klootwijk, H. van Kranenburg, P.H. Woerlee and H. Wallinga
IEEE Transactions on Electron Devices 46 (7) 1435 (1999)
https://doi.org/10.1109/16.772488