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Cited article:

LPCVD of SiC layers in a hot-wall reactor using TMS precursor

F. HENRY, P. MARTI, Y. CASAUX, C. COMBESCURE, A. FIGUERAS, V. MADIGOU, R. RODRIGUEZ-CLEMENTE, A. MAZEL, J. SEVELY, B. ARMAS

J. Phys. IV France, 03 C3 (1993) C3-329-C3-336

DOI: https://doi.org/10.1051/jp4:1993345

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