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Cited article:

EXCITATION-ENHANCED DISLOCATION MOBILITY IN SEMICONDUCTORS

G. VANDERSCHAEVE, C. LEVADE, A. FARESS, J.J. COUDERC, D. CAILLARD

J. Phys. IV France, 01 C6 (1991) C6-305-C6-315

DOI: https://doi.org/10.1051/jp4:1991646

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