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Cited article:

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Variation of dislocation etch-pit geometry: An indicator of bulk microstructure and recombination activity in multicrystalline silicon

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Journal of Applied Physics 115 (18) (2014)
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Nickel: A very fast diffuser in silicon

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Infrared birefringence imaging of residual stress and bulk defects in multicrystalline silicon

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Journal of Applied Physics 108 (6) (2010)
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Chemical natures and distributions of metal impurities in multicrystalline silicon materials

T. Buonassisi, A. A. Istratov, M. D. Pickett, M. Heuer, J. P. Kalejs, G. Hahn, M. A. Marcus, B. Lai, Z. Cai, S. M. Heald, T. F. Ciszek, R. F. Clark, D. W. Cunningham, A. M. Gabor, R. Jonczyk, S. Narayanan, E. Sauar and E. R. Weber
Progress in Photovoltaics: Research and Applications 14 (6) 513 (2006)
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Analysis of copper-rich precipitates in silicon: Chemical state, gettering, and impact on multicrystalline silicon solar cell material

Tonio Buonassisi, Matthew A. Marcus, Andrei A. Istratov, et al.
Journal of Applied Physics 97 (6) 063503 (2005)
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EBIC and TEM analysis of the electrical activity of Σ = 25 and Σ = 13 silicon bicrystals after thermal treatments

A. Ihlal and G. Nouet
Physica Status Solidi (a) 141 (1) 81 (1994)
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EBIC investigations of dislocations and their interactions with impurities in silicon

T. S. Fell, P. R. Wilshaw and M. D. De Coteau
Physica Status Solidi (a) 138 (2) 695 (1993)
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Influence of dislocation density on recombination at grain boundaries in multicrystalline silicon

W Seifert, G Morgenstern and M Kittler
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https://doi.org/10.1088/0268-1242/8/9/001

On the origin of EBIC defect contrast in silicon. A reflection on injection and temperature dependent investigations

M. Kittler and W. Seifert
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https://doi.org/10.1002/pssa.2211380240