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Cited article:

ON THE EBIC BRIGHT CONTRAST AT THE DOT-AND-HALO FEATURES IN GaAs

C. FRIGERI

J. Phys. IV France, 01 C6 (1991) C6-205-C6-210

DOI: https://doi.org/10.1051/jp4:1991631

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This article has been cited by the following article(s):

Recombination activity of threading dislocations in MOVPE-grown AlN/Si {111} films etched by phosphoric acid

Jakub Pongrácz, Petr Vacek and Roman Gröger
Journal of Applied Physics 134 (19) (2023)
https://doi.org/10.1063/5.0171937