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Cited article:

CHARACTERIZATION OF POLYCRYSTALLINE SILICON BY EBIC

M. KITTLER, J. LÄRZ, G. MORGENSTERN, W. SEIFERT

J. Phys. IV France, 01 C6 (1991) C6-173-C6-179

DOI: https://doi.org/10.1051/jp4:1991626

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This article has been cited by the following article(s):

Charge Carrier Transport along Grain Boundaries in Silicon

Martin Kittler, Manfred Reiche and Hans Michael Krause
Solid State Phenomena 205-206 293 (2013)
https://doi.org/10.4028/www.scientific.net/SSP.205-206.293

EBIC study of recombination activity of oxygen precipitation related defects in si

W. Seifert, M, Kittler and J. Vanhellemont
Materials Science and Engineering: B 42 (1-3) 260 (1996)
https://doi.org/10.1016/S0921-5107(96)01718-7

EBIC investigations of dislocations and their interactions with impurities in silicon

T. S. Fell, P. R. Wilshaw and M. D. De Coteau
Physica Status Solidi (a) 138 (2) 695 (1993)
https://doi.org/10.1002/pssa.2211380241

Cathodoluminescence evidence of the relative position of As(g) and Ga(g) dislocation-related energy bands in gallium arsenide

B. Sieber, J. L. Farvacque and A. Miri
Physica Status Solidi (a) 138 (2) 673 (1993)
https://doi.org/10.1002/pssa.2211380238