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Cited article:

CONDITIONS FOR OBTAINING IN-SITU PHOSPHORUS DOPED LPCVD POLYSILICON LAYERS WITH HIGH CONDUCTIVITY ONTO GLASS SUBSTRATES

M. SARRET, A. LIBA, O. BONNAUD, M. MOKHTARI, B. FORTIN

J. Phys. IV France, 02 C2 (1991) C2-817-C2-822

DOI: https://doi.org/10.1051/jp4:1991296

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This article has been cited by the following article(s):

Lateral polysilicon pn diodes: current-voltage characteristics simulation between 200 K and 400 K using a numerical approach

A. Aziz, O. Bonnaud, H. Lhermite and F. Raoult
IEEE Transactions on Electron Devices 41 (2) 204 (1994)
https://doi.org/10.1109/16.277378