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Cited article:
J. MUROTA , M. KATO , R. KIRCHER , S. ONO
J. Phys. IV France, 02 C2 (1991) C2-795-C2-802
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6 articles
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Low-temperature Si/Si1−xGex/Si heterostructure growth at high Ge fractions by low-pressure chemical vapor deposition
Reiner Schütz, Junichi Murota, Takahiro Maeda, et al. Applied Physics Letters 61 (22) 2674 (1992) https://doi.org/10.1063/1.108105