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Cited article:

THE REACTIVITY AND MOLECULAR SIZE OF FILM PRECURSORS DURING CHEMICAL VAPOR DEPOSITION OF WSi_x

Y. SHIMOGAKI, T. SAITO, F. TADOKORO, H. KOMIYAMA

J. Phys. IV France, 02 C2 (1991) C2-95-C2-102

DOI: https://doi.org/10.1051/jp4:1991211

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Ultrafast deposition of microcrystalline Si by thermal plasma chemical vapor deposition

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Theoretical Reactor Design from the Simple Tubular Reactor Analysis for Wsix CVD Process

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