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Cited article:

AN UNDERSTANDING OF IN SITU BORON DOPED POLYSILICON FILMS BY CHARACTERIZATION AND SIMULATION

C. AZZARO, E. SCHEID, D. BIELLE-DASPET, P. DUVERNEUIL, P. BOUDRE

J. Phys. IV France, 02 C2 (1991) C2-79-C2-85

DOI: https://doi.org/10.1051/jp4:1991209

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This article has been cited by the following article(s):

Influence of dopant concentration and type of substrate on the local organization of low-pressure chemical vapour deposition in situ boron doped silicon films from silane and boron trichloride

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Thin Solid Films 446 (2) 218 (2004)
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Application des réseaux de neurones à la modélisation des réacteurs de LPCVD: dépôt de silicium dopé in situ au bore

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Chemical Engineering Journal 72 (2) 171 (1999)
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Thermal and kinetic modelling of low-pressure chemical vapour deposition hot-wall tubular reactors

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Chemical Engineering Science 47 (15-16) 3827 (1992)
https://doi.org/10.1016/0009-2509(92)85132-U