| Issue |
J. Phys. IV France
Volume 11, Number PR3, Août 2001
Thirteenth European Conference on Chemical Vapor Deposition
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|---|---|---|
| Page(s) | Pr3-1005 - Pr3-1012 | |
| DOI | https://doi.org/10.1051/jp4:20013126 | |
J. Phys. IV France 11 (2001) Pr3-1005-Pr3-1012
DOI: 10.1051/jp4:20013126
Characterization of low-dielectric constant SiOCN films synthesized by low pressure chemical vapour deposition
L.M. Zambov1, B. Ivanov1, C. Popov2, G. Georgiev1, I. Stoyanov2 and D.B. Dimitrov31 University of Chemical Technology and Metallurgy, Department of Semiconductors, Kliment Ohridski Str. 8, 1756 Sofia, Bulgaria
2 University of Kassel, Institute of Technical Physics, Heinrich-Plett-Str. 40, 34109 Kassel, Germany
3 Institute of Solid State Physics, Bulgarian Academy of Sciences, Tzarigradsko Chaussee 72, 1784 Sofia, Bulgaria
Abstract
Films composed of Si, C, O and N have been deposited by low pressure chemical vapour deposition (LPCVD) from different chemical systems : pyrolysis of C3N3Cl2N(SiMe3)2 and interaction between SiCl4, C2Cl4, NH3 and H2O vapour. The composition, chemical bonding and structure of the films were investigated by a variety of analytical techniques. The physicochemical and electrical properties of the layers were also studied and it was found that films exhibit low static dielectric constants in the ranges of 2.8 - 3.5 and 1.7 - 2.5 for the two chemical systems, respectively. These low-k values combined with the high density, good adhesion and chemical inertness of the films, make them very attractive for future device technology application.
© EDP Sciences 2001