Journal de Physique IV

On the Deposition Kinetics of the LPCVD Gate Oxides Prepared from SiH₄ and O₂

J.B. Rem, J.H. Klootwijk, C. Cobianu, J. Holleman and J.F. Verweij

J. Phys. IV France, 05 C5 (1995) C5-113-C5-118

DOI: 10.1051/jphyscol:1995511

J.B. Rem

J.H. Klootwijk

C. Cobianu

J. Holleman

J.F. Verweij

Articles written by ALL the selected authors (AND)

Articles written by ANY OF the selected authors (OR)