Journal de Physique IV

Effects of substrate nitridation time on the thermal properties of GaN films grown on silicon by molecular beam epitaxy

M. Cervantes-Contreras, M. López-López, G. González de la Cruz, P. Rodríguez, M. Tamura and T. Yodo

J. Phys. IV France, 125 (2005) 205-208

DOI: 10.1051/jp4:2005125048

M. Cervantes-Contreras

M. López-López

G. González de la Cruz

P. Rodríguez

M. Tamura

T. Yodo

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