Journal de Physique IV

Multi-model hierarchy approach to simulate barrel reactors for epitaxial silicon deposition

M. Di Stanislao, G. Valente, S. Fascella, C. Spampinato, M. Masi and S. Carrà

J. Phys. IV France, 12 4 (2002) 121-128

DOI: 10.1051/jp4:20020086

M. Di Stanislao

G. Valente

S. Fascella

C. Spampinato

M. Masi

S. Carrà

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