Application of HRTEM to studies of electronic structure and atomic configuration of interface in SiC/SiC composites T. Shibayama, G.W. He, Heishichiro Takahashi et A. Kohyama J. Phys. IV France, 10 PR6 (2000) Pr6-97-Pr6-103 DOI: 10.1051/jp4:2000617