Journal de Physique IV

Modelling of SiC sublimation growth process : Influence of experimental parameters on crystal shape

A. Pisch, E. Blanquet, M. Pons, C. Bernard, M. Anikin, J.M. Dedulle and R. Madar

J. Phys. IV France, 09 PR8 (1999) Pr8-213-Pr8-219

DOI: 10.1051/jp4:1999826

A. Pisch

E. Blanquet

M. Pons

C. Bernard

M. Anikin

J.M. Dedulle

R. Madar

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