Direct wafer bonding : A new fabrication method for ferroelectric-silicon heterostructures M. Alexe, R. Scholz, G. Kästner, A. Pignolet et U. Gösele J. Phys. IV France, 08 PR9 (1998) Pr9-239-Pr9-242 DOI: 10.1051/jp4:1998946