Journal de Physique IV

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Electron impact-ionization effects in UHV/CVD SiGe HBT's in the temperature range of 300 to 83 K

G. Niu, U. Gogineni and J.D. Cressler

J. Phys. IV France, 08 PR3 (1998) Pr3-103-Pr3-107

DOI: 10.1051/jp4:1998324

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