Journal de Physique IV

Low temperature mobility improvement in high-mobility strained-Si/Si_1-xGe_x multilayer MOSFETs

J.B. Roldán, F. Gámiz, J.A. López-Villanueva and J.E. Carceller

J. Phys. IV France, 08 PR3 (1998) Pr3-57-Pr3-60

DOI: 10.1051/jp4:1998314

J.B. Roldán

F. Gámiz

J.A. López-Villanueva

J.E. Carceller

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