Journal de Physique IV

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Forced formation of ionized donor layer in p-MOSFET at cryogenic temperatures due to photon emission from its channel

A.A. Frantsuzov and A.V. Kharin

J. Phys. IV France, 08 PR3 (1998) Pr3-41-Pr3-44

DOI: 10.1051/jp4:1998310

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