Journal de Physique IV

Invited PaperComparison of the freeze-out effect in ln and B doped n-MOSFETs in the range 4.2 – 300 K

I. Alawneh, E. Simoen, S. Biesemans, K. De Meyer and C. Claeys

J. Phys. IV France, 08 PR3 (1998) Pr3-3-Pr3-8

DOI: 10.1051/jp4:1998301

I. Alawneh

E. Simoen

S. Biesemans

K. De Meyer

C. Claeys

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