Journal de Physique IV

Enhancements and Degradations in Ultrashort Gate GaAs and InP HEMTs Properties at Cryogenic Temperatures : an Overview

F. Aniel, A. Sylvestre, Y. Jin, P. Crozat, A. de Lustrac and R. Adde

J. Phys. IV France, 06 C3 (1996) C3-145-C3-149

DOI: 10.1051/jp4:1996322

F. Aniel

A. Sylvestre

Y. Jin

P. Crozat

A. de Lustrac

R. Adde

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