Threshold Voltage Characteristics of Superconductor Gate nMOSFET at 4.2 K I. Kurosawa, M. Maezawa, M. Aoyagi, H. Nakagawa, K. Yamamoto et S. Matsumoto J. Phys. IV France, 06 C3 (1996) C3-73-C3-78 DOI: 10.1051/jp4:1996311