Temperature dependence of exciton-capture at impurities in GaAs/AlxGa(1-x) As quantum wells C.I. HARRIS, B. MONEMAR, P.O. HOLTZ, H. KALT, M. SUNDARAM, J.L. MERZ et A.C. GOSSARD Le Journal de Physique IV, 03 C5 (1993) C5-171-C5-174 DOI: 10.1051/jp4:1993531