Journal de Physique IV

Si/Si_1-x Ge_x/Si heterostructure growth by ultraclean low-temperature LPCVD for the fabrication of novel heterodevice

J. MUROTA, T. MAEDA, K. GOTO, K. SAKAMOTO, K. AIZAWA, S. USHIODA and S. ONO

J. Phys. IV France, 03 C3 (1993) C3-403-C3-410

DOI: 10.1051/jp4:1993356

J. MUROTA

T. MAEDA

K. GOTO

K. SAKAMOTO

K. AIZAWA

S. USHIODA

S. ONO

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