Heterostructure of binaries II-VI semiconductors ZnTe and ZnSe / III-V (GaAs, InP, GaSb) A. HAIDOUX, P. TOMASINI, M. MAURIN, J.C. TEDENAC, D. COQUILLAT, A. RIBAYROL, J.P. LASCARAY, D. BOUCHARA, A. ABOUNADI, J. CALAS et B. DUCOURANT J. Phys. IV France, 03 C3 (1993) C3-147-C3-154 DOI: 10.1051/jp4:1993318