LPCVD SiO2 Layers Prepared from SiH4 and O2 at 450 °C in a Rapid Thermal Processing Reactor C. Cobianu, J. B. Rem, J. H. Klootwijk, M. H.H. Weusthof, J. Holleman et P. H. WoerleeJ. Phys. IV France, 05 C5 (1995) C5-1005-C5-1011DOI: https://doi.org/10.1051/jphyscol:19955118
