On the Deposition Kinetics of the LPCVD Gate Oxides Prepared from SiH4 and O2 J. B. Rem, J. H. Klootwijk, C. Cobianu, J. Holleman et J. F. VerweijJ. Phys. IV France, 05 C5 (1995) C5-113-C5-118DOI: https://doi.org/10.1051/jphyscol:1995511
