Influence of the Doping Gas on the Axial Uniformity of the Growth Rate and the Electrical Properties of LPCVD In-Situ Doped Polysilicon Layers D. Briand, M. Sarret, P. Duverneuil, T. Mohammed-Brahim et K. Kis-SionJ. Phys. IV France, 05 C5 (1995) C5-887-C5-893DOI: https://doi.org/10.1051/jphyscol:19955105
