Study of the low frequency noise from 77 K to 300 K in NbN semiconductor thin films deposited on silicon G. Leroy, J. Gest, P. Tabourier, J.-C. Carru, P. Xavier, E. André1 et J. ChaussyJ. Phys. IV France, 12 3 (2002) 175-178DOI: https://doi.org/10.1051/jp420020062
