Electron transport in silicon nanostructures based on ultra-thin SOI A. Pouydebasque, L. Montes, J. Zimmermann, F. Balestra, D. Fraboulet, D. Mariolle, J. Gautier, F. Schopfer, V. Bouchiat et L. SaminadayarJ. Phys. IV France, 12 3 (2002) 97-101DOI: https://doi.org/10.1051/jp420020044
