The impact of an external body-bias on the hot-carrier degradation of Partially Depleted SOI N-MOSFETs at cryogenic temperatures F. Dieudonné, J. Jomaah, C. Raynaud et F. BalestraJ. Phys. IV France, 12 3 (2002) 11-14DOI: https://doi.org/10.1051/jp420020027
