Influence of crystal quality on electron mobility in AlGaN/GaN HEMTs grown on Si(111), SiC and GaN templates Y. Cordier, P. Lorenzini, M. Hugues, F. Semond, F. Natali, Z. Bougrioua, J. Massies, E. Frayssinet, B. Beaumont, P. Gibart et J.-P. FaurieJ. Phys. IV France, 132 (2006) 365-368DOI: https://doi.org/10.1051/jp4:2006132070
