Microwave characteristics of hetero-junction impatt diodes based on SiC V.V. Buniatyan, V.M. Aroutiounian, P.G. Soukiassian, K. Zekentes et Vaz. V. BuniatyanJ. Phys. IV France, 132 (2006) 355-357DOI: https://doi.org/10.1051/jp4:2006132068
