The properties of GaInP/GaAs heterostructures as a function of growth temperature C. Pelosi, G. Attolini, M. Bosi, E. Martín, O. Martinez, L.F. Sanz, J. Jiménez et T. PrutskijJ. Phys. IV France, 132 (2006) 315-319DOI: https://doi.org/10.1051/jp4:2006132060
