Physical property analysis of C-doped GaAs as function of the carrier concentration grown by MOCVD using elemental arsenic as precursor J. Díaz-Reyes, M.A. Avendaño, M. Galván-Arellano et R. Peña-SierraJ. Phys. IV France, 132 (2006) 291-294DOI: https://doi.org/10.1051/jp4:2006132055
