Raman characterization of the In0.14Ga0.86As0.13Sb0.87 highly doped with Te grown on GaSb by liquid phase epitaxy J. Díaz-Reyes, E. López-Cruz, J.G. Mendoza-Álvarez et S. Jiménez-SandovalJ. Phys. IV France, 132 (2006) 211-214DOI: https://doi.org/10.1051/jp4:2006132040
