Influence of Te doping in InGaAsSb epilayers on the non-radiative recombination time studied by the photoacoustic technique M.L. Gomez-Herrera, I. Reich, P. Rodríguez-Fragoso, A. Cruz-Orea, F. Sanchez-Sinencio, J.L. Herrera-Perez, J. Diaz-Reyes et J.G. Mendoza-AlvarezJ. Phys. IV France, 125 (2005) 403-405DOI: https://doi.org/10.1051/jp4:2005125094
