Effects of substrate nitridation time on the thermal properties of GaN films grown on silicon by molecular beam epitaxy M. Cervantes-Contreras, M. López-López, G. González de la Cruz, P. Rodríguez, M. Tamura et T. YodoJ. Phys. IV France, 125 (2005) 205-208DOI: https://doi.org/10.1051/jp4:2005125048
