Growth of porous columnar α-GaN layers on c-plane Al2O3 by MOCVD using Bisazido dimethylaminopropyl gallium as single source precursor A. Wohlfart, A. Devi, F. Hipler, H. W. Becker et R. A. FischerJ. Phys. IV France, 11 PR3 (2001) Pr3-683-Pr3-687DOI: https://doi.org/10.1051/jp4:2001387
