Epitaxial growth of heavily P-doped Si films at 450 °C by alternately supplied PH3 and SiH4 Y. Shimamune, M. Sakuraba, T. Matsuura et J. MurotaJ. Phys. IV France, 11 PR3 (2001) Pr3-255-Pr3-260DOI: https://doi.org/10.1051/jp4:2001332
