Simulation of the large-area growth of homoepitaxial 4H-Sic by chemical vapor deposition M. Pons, J. Mezière, J. M. Dedulle, S. Wan Tang Kuan, E. Blanquet, C. Bernard, P. Ferret, L. Di Cioccio, T. Billon et R. MadarJ. Phys. IV France, 11 PR3 (2001) Pr3-1079-Pr3-1086DOI: https://doi.org/10.1051/jp4:20013135
