Characterization and stressing properties of polysilicon TFTs utilizing oxide films deposited using TEOS D. N. Kouvatsos, V. Em. Vamvakas et D. DavazoglouJ. Phys. IV France, 11 PR3 (2001) Pr3-1037-Pr3-1044DOI: https://doi.org/10.1051/jp4:20013130
